ELECTRON BEAM DECOMPOSITION OF CARBONYLS ON SILICON.

被引：47

作者：

Scheuer, Volker ^{[1
]}

Technische Hochschule Darmstadt, Darmstadt ^{[1
]}

Koops, Hans ^{[1
]}

Tschudi, Theo ^{[1
]}

机构：

[1] Institute of Applied Physics, Tech. Hochsch.Darmstadt, Germany

来源：

Microelectronic Engineering | 1986年 / 5卷 / 1-4期

关键词：

ELECTRON BEAMS - Applications - OSMIUM COMPOUNDS - RUTHENIUM COMPOUNDS;

D O I：

10.1016/0167-9317(86)90072-9

中图分类号：

学科分类号：

摘要：

For pattern generation in the submicron range electron beam induced deposition of desired materials is expected to be a promising technique. Our investigations revealed carbonyls to be appropriate for this procedure. We demonstrate results on the growth of ruthenium and osmium layers formed by electron induced dissociation of ruthenium carbonyl Ru//3(CO)//1//2 and osmium carbonyl Os//3(CO)//1//2. A simple phenomenological model of surface interaction gives guidance for determination of the process parameters.

引用

页码：423 / 430