Radiation defects in Si of high purity

被引：8

作者：

Konozenko, I.D. ^{[1
]}

Semenyuk, A.K. ^{[1
]}

Khivrich, V.I. ^{[1
]}

机构：

[1] Institute of Nuclear Research, Academy of Sciences of Ukrainian SSR, Kiev, Ukraine

来源：

Radiation Effects | 1971年 / 8卷 / 1-2期

关键词：

D O I：

10.1080/00337577108231017

中图分类号：

学科分类号：

摘要：

Radiation defects created by U- irradiation of CO//6//0 and fast neutrons in high pruity p- Si and n- Si are investigated by measurements of Hall effect, resistivity and minority carrier lifetime. The oxygen concentration in the crystals is in the range of 5 x 10//1//4 to 5 x 10//1//5 cm- //3.

引用

页码：121 / 127