Cr75Si25 THIN FILMS-TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES AND MICROSTRUCTURE.

被引：20

作者：

Weiss, B.Z. ^{[1
]}

Tu, K.N. ^{[1
]}

Smith, D.A. ^{[1
]}

机构：

[1] IBM Thomas J. Watson Research Cent,, Yorktown Heights, NY, USA, IBM Thomas J. Watson Research Cent, Yorktown Heights, NY, USA

来源：

Acta Metallurgica | 1986年 / 34卷 / 08期

关键词：

CHROMIUM METALLOGRAPHY - Microstructures - CRYSTALLIZATION - ELECTRIC PROPERTIES - Thermal Effects;

D O I：

10.1016/0001-6160(86)90094-5

中图分类号：

学科分类号：

摘要：

Electrical and microstructural changes of thin co-evaporated alloy films have been studied as a function of temperature from room temperature to 950 degree C. In situ resistivity measurements, hot stage transmission electron microscopy. Rutherford backscattering spectroscopy, Seeman-Bohlin and Bragg-Brentano X-ray diffraction methods were applied. The two-stage decrease in resistivity, abrupt and then gradual, is associated with primary and secondary crystallization processes. After crystallization is completed, a nonlinear irreversible increase in resistivity above 670 degree C resulting from thermal grooving at grain boundaries has been observed. The apparent activation energy of crystallization is 2. 71 ev.

引用

页码：1491 / 1504