Carrier dynamics in staggered-band lineup n-InAlAs/n-InP heterostructures

被引：22

作者：

机构：

[1] Bohrer, J.

[2] Krost, A.

[3] Bimberg, D.

来源：

Bohrer, J. | 1992年 / American Inst of Physics, Woodbury, NY, United States卷 / 64期

关键词：

Band structure - Charge carriers - Chemical vapor deposition - Dynamics - Electrons - Interfaces (materials) - Mathematical models - Optical variables measurement - Photoluminescence - Semiconducting indium compounds - Thermal effects;

D O I：

10.1063/1.111716

中图分类号：

学科分类号：

摘要：

The first result of a systematic study of the temperature dependence of the photoluminescence (PL) intensity and lifetime of the spatially indirect transition at the InAlAs/InP interface is reported in this paper. An investigation on the temperature and time-dependent recombination of 2D electrons and holes localized at InAlAs/InP staggered lineup heterointerfaces grown by low-pressure metal-organic chemical-vapor deposition (MOCVD) is presented. If the temperature increases, higher subband levels are observed to become occupied, new radiative and nonradiative recombination channels open leading to a reduction to both the effective radiative and nonradiative decay times. A reduction of the total decay time by a factor of 2.5 with increasing temperature is observed between 7 and 300 K. The luminescence efficiency drops only by a factor of 20 much less what is typically observed for 3D layers. Both observations are understood by considering the particular subband structure of the electrons and holes.

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