Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET

被引：1

作者：

Tanamoto, Tetsufumi ^{[1
]}

机构：

[1] Corp. R. and D. Center, Toshiba Corp., Saiwai-ku, 210-8582, Kawasaki, Japan

来源：

Physica B: Condensed Matter | 1999年 / 272卷 / 01期

关键词：

Capacitance - Electric currents - Gates (transistor) - MOSFET devices - Semiconductor device models;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The quantum gates of the capacitively coupled quantum dot array in the MOSFET structure were investigated. The two-state Hamiltonian by the capacitances of the quantum dots are derived and the detecting mechanism of the MOSFET structure is illustrated by analyzing the channel current based on the conversion MOSFET model.

引用

页码：45 / 48