Lateral-resonant-tunneling universal quantum-dot cell

被引：16

作者：

Randall, J.N. ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, United States

来源：

Nanotechnology | 1993年 / 4卷 / 01期

关键词：

Control - Electronic equipment - Quantum electronics - Semiconductor materials - Technology;

D O I：

10.1088/0957-4484/4/1/003

中图分类号：

学科分类号：

摘要：

A lateral-resonant-tunneling quantum-dot cell is described which is configurable to span the complete range of three-input functions. The cell area could be of the order of 0.1 μm2. This cell could enable large, edge-fed, cellular cascade arrays. These arrays could perform general logic functions.

引用

页码：41 / 48