Thin films of wide bandgap II-VI compounds grown by atomic layer epitaxy - Properties and application

被引：4

作者：

Godlewski, M. ^{[1
]}

Szczerbakow, A. ^{[1
]}

Godlewski, M.M. ^{[2
]}

机构：

[1] Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland

[2] Dept. of Physiology, Biochemistry Pharmacology and Toxicology, Faculty of Veterinary Medicine, Warsaw Agriculture University

来源：

Journal of Wide Bandgap Materials | 2001年 / 9卷 / 1-2期

关键词：

Crystal growth - Electroluminescence - Impact ionization - Light emission - Rare earth compounds - Semiconductor doping - Transition metals - Vapor phase epitaxy - Zinc sulfide;

D O I：

10.1106/152451102025831

中图分类号：

学科分类号：

摘要：

Thin films of ZnS, SrS and CaS, grown by atomic layer epitaxy (ALE) and doped with various transition metal and/or rare earth ions, are used in commercialized new generation of the thin film electroluminescence (TFEL) devices. ALE growth technique and its application to the growth of the TFEL devices will first be shortly described. Competing approaches to get bright blue, green and red color light emission will be reviewed. Then, new experimental results obtained by us for the ALE-grown thin films of ZnSe will be presented. The origin of the bright white color emission from these films will be explained. © 2002 Sage Publications.

引用

页码：75 / 82