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GETTERING BY ION IMPLANTATION.
被引：21
作者：
Lecrosnier, D.
机构：
来源：
Nuclear instruments and methods in physics research
|
1983年
/
209-210卷
/
Pt 1期
关键词：
CRYSTALS;
-;
Defects;
D O I：
10.1016/0167-5087(83)90819-0
中图分类号：
学科分类号：
摘要：
A review is presented of the gettering effects which are observed both in silicon and in III-V compounds. It is found that, at least, four different trapping regions can be identified: (i) The surface; (ii) The region of primary defects; (iii) The doped layer; (iv) The region of recoiled host atoms. As a consequence, most gettering experiments must be considered as the result of a competition between these different regions.
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页码：325 / 332
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