FABRICATION OF NANOMETER WIDTH GaAs/AlGaAs AND InGaAs/InP QUANTUM WIRES.

被引：7

作者：

Maile, B.E. ^{[1
]}

Forchel, A. ^{[1
]}

German, R. ^{[1
]}

Menschig, A. ^{[1
]}

Streubel, K. ^{[1
]}

Scholz, F. ^{[1
]}

Weimann, G. ^{[1
]}

Schlapp, W. ^{[1
]}

机构：

[1] Univ Stuttgart, Stuttgart, West Ger, Univ Stuttgart, Stuttgart, West Ger

来源：

Microelectronic Engineering | 1987年 / 6卷 / 1-4期

关键词：

ELECTRON BEAMS - LITHOGRAPHY - MICROELECTRONICS - PHOTOLUMINESCENCE;

D O I：

10.1016/0167-9317(87)90032-3

中图分类号：

学科分类号：

摘要：

Starting from GaAs/AlGaAs and InGaAs/InP quantum well structures, we have produced quantum wires with lateral dimensions down to 30 nm, using direct electron beam writing and several dry etching techniques. Investigating the photoluminescence efficiency of wire structures as a function of the linewidth, we find a steep decrease with decreasing linewidth in the case of the GaAs/AlGaAs system, whereas for InGaAs/InP the decrease is much smaller. This luminescence decay can be interpreted as a result of the surface recombination at the sidewalls, which gains growing influence with decreasing linewidth.

引用

页码：163 / 168