Photoluminescence studies of GaAs-AlGaAs quantum dots

被引：5

作者：

Arnot, H. ^{[1
]}

Andrews, S.R. ^{[1
]}

Beaumont, S.P. ^{[1
]}

机构：

[1] Univ of Glasgow, United Kingdom

来源：

Microelectronic Engineering | 1989年 / 9卷 / 1-4期

关键词：

Photoluminescence - Semiconducting Intermetallics--Analysis - Semiconductor Materials--Optical Properties;

D O I：

10.1016/0167-9317(89)90080-4

中图分类号：

学科分类号：

摘要：

Free standing quantum dots with diameters between 40 and 400nm have been fabricated by electron beam lithography and reactive ion etching. The extent of the damage and the importance of surface recombination have been assessed optically using low temperature photoluminescence and photoluminescence excitation spectroscopy. It was found that the luminescence efficiency of the quantum dots scaled approximately with the volume of well material excited.

引用

页码：365 / 368