Thin Ta2O5 films prepared by low pressure metal organic CVD

被引：29

作者：

Rausch, N. ^{[1
]}

Burte, E.P. ^{[1
]}

机构：

[1] Faunhofer-Arbeitsgruppe fur, Integrierte Schaltungen, Erlangen, Germany

来源：

Microelectronics Journal | 1993年 / 24卷 / 04期

关键词：

Annealing - Chemical vapor deposition - Data storage equipment - Dielectric materials - Electric properties - Film preparation - Organometallics - Semiconductor materials - Tantalum compounds - Thin films;

D O I：

10.1016/0026-2692(93)90048-J

中图分类号：

学科分类号：

摘要：

The preparation and properties of tantalum pentoxided (Ta2O5 ) the film have been studied with respect to its application as a capacitor dielectric material in low-power, high-density dynamic random access memories (DRAMs). Ta2O5 films were deposited in a hot wall-type vertical furnace by a low pressure metal organic chemical vapor deposition (LPMOCVD) process at low temperatures (375-500°C) and then annealed in oxygen ambient at temperatures up to 1000°C. This annealing treatment improved significantly the electrical properties of the Ta2O5 film.

引用

页码：421 / 426