X-ray wavelength optimization of the laser plasma X-ray lithography source

被引：7

作者：

Chaker, M. ^{[1
]}

Boily, S. ^{[1
]}

Lafontaine, B. ^{[1
]}

Kieffer, J.C. ^{[1
]}

Pepin, H. ^{[1
]}

Toubhans, I. ^{[1
]}

Fabbro, R. ^{[1
]}

机构：

[1] Univ du Quebec, Canada

来源：

Microelectronic Engineering | 1990年 / 10卷 / 02期

关键词：

Integrated Circuit Manufacture - Lithography;

D O I：

10.1016/0167-9317(90)90002-B

中图分类号：

学科分类号：

摘要：

A key advantage of the laser plasma source is its X-ray wavelength tunability, which is achieved by a convenient choice of the target atomic number. We provide a detailed analysis of the X-ray lithography parameters and demonstrate how to take full advantage of the flexibility of this source using both a simulation code called XLIMLAS and suitable experimental data. From these results, we determine the influence of each X-ray spectrum (related to a given target atomic number) on optimization of vital lithography characteristics such as wafer throughput, resolution and exposure conditions.

引用

页码：91 / 105