Exact expression for the noise resistance Rn for the Hawkins bipolar noise model

被引：11

作者：

Pucel, R.A. ^{[1
]}

Rohde, U.L. ^{[1
]}

机构：

[1] Raytheon Co, Lexington, United States

来源：

IEEE Microwave and Guided Wave Letters | 1993年 / 3卷 / 02期

关键词：

Acoustic impedance - Correlation methods - Electric network analysis - Mathematical models - Mathematical transformations - Matrix algebra - Spurious signal noise;

D O I：

10.1109/75.196033

中图分类号：

学科分类号：

摘要：

A much used noise model for the bipolar transistor is that based on Hawkins formulation. The model, however lacks an expression for the noise resistance. An exact analytic expression, based on the noise correlation matrix approach, is developed for the noise resistance for this noise model.

引用

页码：35 / 37