Ultraviolet laser and photodetector of CdZnS/ZnS multiple quantum wells

被引：15

作者：

Taguchi, T. ^{[1
]}

Yamada, Y. ^{[1
]}

Ohno, T. ^{[1
]}

Mullins, J.T. ^{[1
]}

Masumoto, Y. ^{[1
]}

机构：

[1] Osaka Univ, Japan

来源：

Physica B: Condensed Matter | 1993年 / 191卷 / 1-2期

关键词：

Electric currents - Heterojunctions - Light emission - Optical pumping - Semiconducting cadmium compounds - Semiconducting zinc compounds - Semiconductor device manufacture - Semiconductor lasers - Semiconductor superlattices - Spectrum analysis - Strain - Ultraviolet detectors;

D O I：

10.1016/0921-4526(93)90187-B

中图分类号：

学科分类号：

摘要：

Ultraviolet (UV) lasers have been constructed for the first time from multiple quantum well (MQW) heterostructures of CdxZn1-xS/ZnS (x = 0.11-0.31) strained-layer superlattices. Stimulated emission can be observed either under optical pumping at RT or under pulsed injection at 30 K in the spectral range of 357-390 nm. Structures of the laser were fabricated by the gaseous low-pressure MOCVD method. A spectral narrowing in the emission spectrum with increasing current in the UV injection diode was clearly observed in the vicinity of 375 nm at 30 K. An UV photodetector has been successfully prepared from this MQW system, in which a spectral responsivity at 366 nm exhibits a high efficiency of about 60 mA/W.

引用

页码：136 / 139