PHOTOCATALYTIC NOVOLAK-BASED POSITIVE RESIST FOR X-RAY LITHOGRAPHY - KINETICS AND SIMULATION.

被引：12

作者：

Dammel, R. ^{[1
]}

Doessel, K.F. ^{[1
]}

Lingnau, J. ^{[1
]}

Theis, J. ^{[1
]}

Huber, H.L. ^{[1
]}

Oertel, H. ^{[1
]}

机构：

[1] Hoechst AG, Frankfurt, West Ger, Hoechst AG, Frankfurt, West Ger

来源：

Microelectronic Engineering | 1987年 / 6卷 / 1-4期

关键词：

We thank Miss I. Kuna for assistance with the 3CS-resist exposures; Mr. J. Hofstetter for carrying out the HPLC investigations; and Siemens Systemtechnik; Berlin; for providing the MESFET specimens shown in Fig. 7. This work was supported in part by the Bundesministerium for Forschung und Technologie (BMFT; FRG);

D O I：

10.1016/0167-9317(87)90080-3

中图分类号：

学科分类号：

摘要：

引用

页码：503 / 509