NATURE OF UNSEEDED CRYSTALLIZATION IN SEMICONDUCTORS.

被引：8

作者：

Narayan, J. ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Solid State Div,, Oak Ridge, TN, USA, Oak Ridge Natl Lab, Solid State Div, Oak Ridge, TN, USA

来源：

Materials Letters | 1984年 / 2卷 / 03期

关键词：

CRYSTALS - Growing - ELECTRON BEAMS - Applications - LASER BEAMS - Effects - SEMICONDUCTOR MATERIALS - Ion Implantation;

D O I：

10.1016/0167-577X(84)90027-2

中图分类号：

学科分类号：

摘要：

The authors have studied crystal growth directions in explosively recrystallized ion-implanted amorphous silicon layers on silicon substrates (induced by continuous-wave Ar** plus laser or electron beam). Both these cases represented examples of unseeded crystallization in which we found LT AN BR 111 RT AN BR as the preferred direction of crystal growth. A crystallization model is presented to rationalize the predominance of LT AN BR 110 RT AN BR direction during unseeded crystal growth in semiconductors with a diamond cubic structure.

引用

页码：219 / 222