Switching operation in OMVPE grown GaInAs/InP MQW intersectional optical switch structures

被引：16

作者：

Kikugawa, T. ^{[1
]}

Ravikumar, K.G. ^{[1
]}

Shimomura, K. ^{[1
]}

Izumi, A. ^{[1
]}

Matsubara, K. ^{[1
]}

Miyamoto, Y. ^{[1
]}

Arai, S. ^{[1
]}

Suematsu, Y. ^{[1
]}

机构：

[1] Tokyo Inst of Technol, Tokyo, Jpn

来源：

IEEE Photonics Technology Letters | 1989年 / 1卷 / 06期

关键词：

Crystals--Epitaxial Growth - Waveguides; Optical;

D O I：

10.1109/68.36010

中图分类号：

学科分类号：

摘要：

An intersectional optical switch structure with an intersecting angle of 6° was fabricated on an organometallic vapor-phase epitaxy (OMVPE) grown GaInAs/InP multiple quantum-well (MQW) layered wafer. Switching operation using field-induced refractive index variation was successfully demonstrated at the reverse bias voltage of 8 V for the 1.6 μm wavelength region. Based on this switching, the field-induced refractive index variation in the QW was estimated as around 1%.

引用

页码：126 / 128