INDIUM PHOSPHIDE OXIDE ON InP FOR MOSFET APPLICATIONS.

被引：9

作者：

Al-Refaie, S.N.

Carroll, J.E.

机构：

来源：

IEE Proceedings I: Solid State and Electron Devices | 1981年 / 128卷 / 06期

关键词：

MOSFET;

D O I：

10.1049/ip-i-1.1981.0051

中图分类号：

学科分类号：

摘要：

Oxide films have been deposited on InP by sputtering InP in an oxygen dc-excited plasma. The rate of sputtering was enhanced by applying a magnetic field. Preliminary microprobe and Auger analysis of the films has indicated equal proportions of indium and phosphorus with a good incorporation of oxygen and a moderately uniform composition. Measurements on MOS devices have shown a film resistivity of approximately equals 3 multiplied by 10**1**2 OMEGA cm. The oxide film has been used in fabricating n-channel inversion-type MOSFETs.

引用

页码：207 / 210