ELECTRONIC-STRUCTURE OF A TI(0001) FILM

被引:168
作者
FEIBELMAN, PJ [1 ]
APPELBAUM, JA [1 ]
HAMANN, DR [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1979年 / 20卷 / 04期
关键词
D O I
10.1103/PhysRevB.20.1433
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A self-consistent calculation of the electronic structure of a thin Ti(0001) film leads to the prediction of a band of surface states coincident with the Fermi level and extending a few tenths of an eV on either side of it. The calculation is performed in a linear combination of Gaussian orbitals basis. The procedure by which the evaluation of the Hamiltonian matrix is reduced to summing over three-center integrals as well as the method by which Gaussian bases are selected are thoroughly described. Observation of the predicted surface band by angle-resolved photoemission is discussed, as well as the question of how general a surface band near the Fermi energy should be among the hcp d-band metals. A shift of surface atom core levels to 0.25 eV greater binding energy is predicted, and the origin of this shift is discussed. © 1979 The American Physical Society.
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页码:1433 / 1443
页数:11
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