脉冲激光沉积法制备PZT铁电薄膜及衬底温度对膜的影响

被引：7

作者：

罗皓

郑学军

周益春

机构：

[1] 湘潭大学物理系!湘潭

[2] 湘潭大学基础力学及材料工程研究所!湘潭

[3] 湘潭大学基础力学及材料工程研究所湘潭

来源：

中国激光 | 2001年 / 06期

关键词：

脉冲激光沉积; 铁电薄膜; 衬底温度; 化学反应; 相变;

D O I：

暂无

中图分类号：

O484.1 [薄膜的生长、结构和外延];

学科分类号：

080501 ; 1406 ;

摘要：

采用脉冲激光沉积法在Si(10 0 )衬底上制备了Pb(Zr0 .52 Ti0 .4 8)O3 铁电薄膜 ,并用X射线衍射 (XRD) ,扫描电镜 (SEM )对其结构、形貌以及结构随沉积时衬底温度的变化进行了研究。由脉冲激光制备薄膜的机制出发 ,从PbO ,ZrO2 和TiO2 熔融体的化学反应及应力造成能量释放引起的相变两方面分析了铅基铁电薄膜制备时衬底温度的影响。

引用

页码：570 / 572

页数：3

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