InAs/(In)GaSbⅡ类超晶格红外探测器研究现状

被引:5
作者
史衍丽
余连杰
田亚芳
机构
[1] 昆明物理研究所
关键词
InAs/GaSb; Ⅱ类超晶格; 红外探测器; 第三代焦平面;
D O I
暂无
中图分类号
TN215 [红外探测、红外探测器];
学科分类号
摘要
InAs/GaSbⅡ类超晶格具有优越的材料性能,量子效率高,暗电流小,能带结构可调,在国际上被认为是第三代红外焦平面探测器的优选材料。对目前Ⅱ类超晶格红外焦平面在国外的发展状况、现有的材料技术、探测器技术以及潜在的应用进行了介绍,旨在尽快发展属于我国的第三代InAs/(In)GaSbⅡ类超晶格红外探测器技术。
引用
收藏
页码:621 / 626
页数:6
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