共 16 条
[1]
Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(001) in low-pressure MOVPE. Taniyasu Y,Ito R,Shimoyama N,et al. Journal of Crystal Growth . 1998
[2]
CAICISSanalysisforthepolarityconversionofGaNfilms grownonnitridedsapphiresubstrates. LimDH,XuK,TaniyasuY ,etal. Proc.Int.WorkshoponNitrideSemiconductors . 2000
[3]
AnewapproachtogrowGaNbylow pressureMOCVDusingathreestepstechnique[C]. LiuB,LimDH,LachabM ,etal. Proc.Int.WorkshoponNitrideSemiconductors . 2000
[4]
Band gaprenormalizationandbandfillinginSi dopedGaNfilmsstudiedbyphotoluminescence. YoshikawaM,KunzerM,WagnerJH ,etal. J .Appl.Phys . 1999
[5]
Band gapnarrowingandpotentialfluctuationinSi dopedGaN. LeeIH,LeeJJ,KungP ,etal. Applied Physics Letters . 1999
[6]
Metalorganicvapor phase epitaxial growth of a high quality GaN film usingan AlN buffer layer. Amano H,Sawaki N,Akasaki I,et al. Applied Physics Letters . 1986
[7]
Candela-class highbrightness InGaN/AlGaN double-heterostructure bluelight-emitting diodes. Nakamura S,Mukai T,Senoh M. Applied Physics Letters . 1994
[8]
Low pressure metalorganic vapor phase epitaxial growth of GaN/InGaN heterostructres. Scholz F,Harle V,Bolay H,et al. Solid State Electronics . 1997
[9]
The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer. Lin C F,Chi G C,Feng M S,et al. Applied Physics Letters . 1996
[10]
Control of the polarity and surface morphology of GaN films deposited on c-plane sapphire. Sumiya M,Tanaka M,Ohtsuka K,et al. Applied Physics Letters . 1999