980nm OPS-VECSEL关键参数的理论分析

被引：4

作者：

程立文 ^{[1
]}

梁雪梅 ^{[1
]}

秦莉 ^{[1
]}

王祥鹏 ^{[1
]}

盛阳 ^{[2
]}

宁永强 ^{[1
]}

王立军 ^{[1
]}

机构：

[1] 中国科学院长春光学精密机械与物理研究所

[2] Crosslight公司中国分公司

来源：

发光学报 | 2008年 / 04期

关键词：

半导体激光器; 垂直外腔面发射激光器; 光抽运; 量子阱; 理论模拟;

D O I：

暂无

中图分类号：

TN248.4 [半导体激光器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

光抽运半导体垂直外腔面发射激光器(Optically Pumped Semiconductor Vertical External Cavity SurfaceEmission Laser)的输出特性受到诸多参数的影响,理论分析和模拟显得尤为重要。设计了一种以808 nm二极管激光耦合模块为光抽运光源,In0.159Ga0.841As/GaAs0.94P0.06为增益介质的980 nm光抽运垂直外腔面发射激光器,并借助于PICS3D软件计算了器件各种特性参数。分析了芯片半径、量子阱的周期数以及外腔镜反射率对器件性能的影响,特别是对阈值和光-光转换效率的影响。模拟结果表明,器件的半径影响光-光转换效率。量子阱个数和外腔镜反射率对器件的输出功率和光-光转换效率都有影响,所以要根据实际需要,设计、生长结构和进行实验。

引用

页码：713 / 717

页数：5

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