半导体/超晶格分布布拉格反射镜的特性研究

被引:1
作者
晏长岭
钟景昌
赵英杰
苏伟
黎荣晖
任春燕
机构
[1] 长春光学精密机械学院高功率半导体激光国家重点实验室!吉林长春
[2] 长春光学精密机械学院高功率半导体激光国家重点实验室!吉林长
关键词
分布布拉格反射镜(DBR); 超晶格; 分子束外延(MBE); 反射谱; 串联电阻;
D O I
暂无
中图分类号
O472.3 [];
学科分类号
摘要
在n+ GaAs (10 0 )衬底上由分子束外延技术 (MBE)生长了以 [GaAs/AlAs]超晶格替代AlxGa1-xAs所形成的新型AlAs/ [GaAs/AlAs]半导体 /超晶格分布布拉格反射镜 (DBR) ,并对此DBR的光、电学特性进行了实验测量。从实验获得的DBR的反射谱中得出 ,其反射谱中心波长为 85 0nm ,19周期此DBR的峰值反射率高达 99 5 % ,反射带宽度为 90nm左右。与此同时 ,由自行设计的二次钨丝掩模质子注入形成 15× 15 μm2 正方形电流注入区对 p型DBR的串联电阻进行了测量 ,克服了化学湿腐蚀法中腐蚀深度不易控制及侧面同时被腐蚀的缺点。实验得出此 p型DBR的串联电阻仅为 5 0Ω左右。由此可见 ,此DBR在保持高的反射率的同时具有较低的串联电阻。最后 ,对DBR的串联电阻与温度关系的实验研究表明 ,此DBR的串联电阻受温度的影响不大。
引用
收藏
页码:289 / 293
页数:5
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