SiC功率MOSFET器件研制进展

[1] Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications[J] . Donald A. Gajewski,Sei Hyung Ryu,Mrinal Das,Brett Hull,Jonathan Young,John W. Palmour.Materials Science Forum . 2014 (778)

[2] 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation[J] . Hull Brett A.,Ryu Sei Hyung,Zhang Q. Jon,Jonas Charlotte,O’Loughlin Michael J.,Callanan Robert,Palmour John W..Materials Science Forum . 2011 (679)

[1] Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications[J] . Donald A. Gajewski,Sei Hyung Ryu,Mrinal Das,Brett Hull,Jonathan Young,John W. Palmour.Materials Science Forum . 2014 (778)

[2] 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation[J] . Hull Brett A.,Ryu Sei Hyung,Zhang Q. Jon,Jonas Charlotte,O’Loughlin Michael J.,Callanan Robert,Palmour John W..Materials Science Forum . 2011 (679)