半导体器件HPM损伤脉宽效应机理分析

A review of the physics and response m odels for burnout of sem iconductor devices. Orvis W J,Khanaka G H,Yee JH,et al. UCRL -5 35 73 . 1984

Semiconductor Device Modeling with BURN42. Orvis W J,Yee J H. A One-Dimensional Code For Modeling Solid State Device[C], UCID20602 . 1985

A comparison of DC and RF pulse susceptibilities of UHF transistors. Whalen J J. IEEE Transactions on Electromagnetic Compatibility . 1977

Boundary conditions between current mode and thermal mode second breakdown in epitaxial planar transistors. Koyanagi K,Hane K,Suzuki T. IEEE Transactions on Electron Devices . 1977

A review of the physics and response m odels for burnout of sem iconductor devices. Orvis W J,Khanaka G H,Yee JH,et al. UCRL -5 35 73 . 1984

Semiconductor Device Modeling with BURN42. Orvis W J,Yee J H. A One-Dimensional Code For Modeling Solid State Device[C], UCID20602 . 1985

A comparison of DC and RF pulse susceptibilities of UHF transistors. Whalen J J. IEEE Transactions on Electromagnetic Compatibility . 1977

Boundary conditions between current mode and thermal mode second breakdown in epitaxial planar transistors. Koyanagi K,Hane K,Suzuki T. IEEE Transactions on Electron Devices . 1977