微构造硅表面形貌的陷光特性研究

被引:3
作者
何慧丽
陈长水
王芳
刘颂豪
机构
[1] 华南师范大学光子纳米生物技术研究中心
关键词
激光技术; 黑硅; 陷光特性; 飞秒激光;
D O I
暂无
中图分类号
TN249 [激光的应用];
学科分类号
摘要
在特定的气体氛围下,用一定能量密度的飞秒激光连续照射单晶硅片表面,可制备出表面具有准规则排列微米量级锥形尖峰结构的黑硅材料。利用几何光学中光的传输理论,研究了黑硅材料的陷光特性,以及黑硅表面准规则排列的微米量级锥形尖峰结构的形状和密度对反射次数的影响。得到黑硅的表面准规则排列的微米量级锥形尖峰结构的高度越高、间距越小和底角越大,它的陷光效果就越好的结论。
引用
收藏
页码:617 / 621
页数:5
相关论文
共 12 条
[1]  
Black silicon-newfunc-tionalities in microsystems. Stubenrauch M,Fishcer M,Kremin C. Journal of Micromechnism andMicroengineering . 2006
[2]  
Symmetric silicon micro fuel cell with porous electrodes. Gianmario Scotti,Petri Kanninen,et al. IEEE Solid-State Sensors,Actuators and Microsystems Conference . 2009
[3]  
Nanostructured black silicon and the optical reflectance of graded-density surfaces. Branz Howard M,Yost Vernon E,Ward Scott,et al. Applied Physics Letters . 2009
[4]  
Deep trench plasma etching of sc Si using SF6/O2 gas mixtures. D’’Emic C P,Chan K K,Blum J. Journal of Vacuum Science and Technology . 1992
[5]  
Temperature effects on a RIPE reactor. Petri R,Francou J-M,Inard A,et al. Microelectron.Eng . 1991
[6]  
Control of shape of silicon needles fabricated by highly selective anisotropic dry etching. Kanechika M,Sugimoto N,Mitsushima Y. Journal of Vacuum Science and Technology . 2002
[7]  
Near-unity below-band-gap absorption by microstructured silicon. Wu C,Crouch C H,Zhao L,et al. Applied Physics Letters . 2001
[8]  
Microstructuring of silicon with femtosecond laser pulses. Her TH,Finlay RJ,Wu C,et al. Applied Physics . 1998
[9]  
Nanostructured surfaces for dramatic reduction of flow resistance in droplet-based microfluidics. Kim J,Kim C J. Proc. IEEE Micro Electro Mech. Syst . 2002
[10]  
The black silicon method - a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control. Jansen,H. Journal of Micromechanics and Microengineering . 1995