Study of Growing Interface and Kinetics Mechanism of Bi12SiO20 Crystal

被引：1

作者：

陈锦元

山国强

金蔚青

严鸿萍

机构：

[1] Shanghai Institute of Ceramics

[2] Shanghai

[3] Academia Sinica

来源：

人工晶体学报 | 1991年 / Z1期

关键词：

Study of Growing Interface and Kinetics Mechanism of Bi; Crystal; SiO;

D O I：

10.16553/j.cnki.issn1000-985x.1991.z1.010

中图分类号：

学科分类号：

摘要：

As a newly deVeloped method, high temperature in situ observation method can be used to observe directly the interface changes and study the kinetics mechanism during crystal growth. By our newly designed high temperature in situ observation equiPment, the interface changes of BiSiOcrystal growth from

引用

页码：207 / 207

页数：1