Effect of ion implantation upon erosion resistance of polyimide films in space environment

被引：2

作者：

多树旺 ^{[1
,2
]}

李美栓 ^{[3
]}

周延春 ^{[3
]}

机构：

[1] Jiangxi Key Laboratory of Surface EngineeringJiangxi Science and Technology Normal University,Nanchang , China

[2] Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang ,China

[3] Shenyang National Laboratory for Materials ScienceInstitute of Metal Research,Chinese Academy of Sciences,Shenyang ,China

来源：

TransactionsofNonferrousMetalsSocietyofChina | 2006年 / S2期

关键词：

atomic oxygen; ion implantation; surface modification; polyamide; erosion resistance;

D O I：

暂无

中图分类号：

TB383.2 [];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

<正>The atomic oxygen (AO) resistance of Si ion implanted polyimide films in the ground-based AO simulation facility was investigated by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The results show that at the initial stage of AO exposure the implanted sample has a small mass change, and then is stabilized. The erosion yield of the implanted polyimide film decreases by about two orders of magnitude compared with that of the polyimide film. The analysis through XPS and AES indicates that a continuous high-quality protective oxide-based (SiO2) surface layer is formed on the implanted polyimide films after the AO exposure. It can provide high-quality erosion protection for these materials. The implanted polyimide fully restores its original color and the carbonization effect disappears on the whole after AO exposure. Thermal-optical properties and surface morphology of the implanted polyimide materials are not altered. The modified materials have a markedly increased erosion resistance in AO environment.

引用

页码：661 / 664

页数：4