1700V碳化硅MOSFET设计

Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC[J] . Hatakeyama Tetsuo,Suzuki Takuma,Ichinoseki Kyoichi,Matsuhata Hirofumi,Fukuda Kenji,Shinohe Takashi,Arai Kazuo.Materials Science Forum . 2010 (645)

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO[J] . Grieb Michael,Noborio Masato,Peters Dethard,Bauer Anton J.,Friedrichs Peter,Kimoto Tsunenobu,Ryssel Heiner.Materials Science Forum . 2009 (615)

Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal[J] . Das Mrinal K.,Hull Brett A.,Krishnaswami Sumi,Husna Fatima,Haney Sarah K.,Lelis Aivars J.,Scozzie Charles J.,Scofield James D..Materials Science Forum . 2006 (527)

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient[J] . Kosugi Ryouji,Fukuda Kenji,Arai Kazuo.Materials Science Forum . 2005 (483)

Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2[J] . Wang W.,Banerjee S.,Chow T. Paul,Gutmann Ronald J.,Isaacs-Smith Tamara,Williams John R.,Jones Kenneth A.,Lelis Aivars J.,Tipton W.,Scozzie Skip,Agarwal Anant K..Materials Science Forum . 2004 (457)

Impact of Oxidation Conditions and Surface Defects on the Reliability of Large-Area Gate Oxide on the C-Face of 4H-SiC[J] . Hatakeyama Tetsuo,Suzuki Takuma,Ichinoseki Kyoichi,Matsuhata Hirofumi,Fukuda Kenji,Shinohe Takashi,Arai Kazuo.Materials Science Forum . 2010 (645)

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO[J] . Grieb Michael,Noborio Masato,Peters Dethard,Bauer Anton J.,Friedrichs Peter,Kimoto Tsunenobu,Ryssel Heiner.Materials Science Forum . 2009 (615)

Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300oC NO Anneal[J] . Das Mrinal K.,Hull Brett A.,Krishnaswami Sumi,Husna Fatima,Haney Sarah K.,Lelis Aivars J.,Scozzie Charles J.,Scofield James D..Materials Science Forum . 2006 (527)

High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient[J] . Kosugi Ryouji,Fukuda Kenji,Arai Kazuo.Materials Science Forum . 2005 (483)

Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2[J] . Wang W.,Banerjee S.,Chow T. Paul,Gutmann Ronald J.,Isaacs-Smith Tamara,Williams John R.,Jones Kenneth A.,Lelis Aivars J.,Tipton W.,Scozzie Skip,Agarwal Anant K..Materials Science Forum . 2004 (457)