GaN蓝光发光二极管的负电容现象研究

被引：7

作者：

曾志斌

朱传云

李乐

赵锋

王存达

机构：

[1] 天津大学应用物理学系

[2] 天津大学应用物理学系天津

来源：

光电子·激光 | 2004年 / 04期

关键词：

GaN; 发光二极管(LEDs); 负电容; 正向交流(a.c.)特性; a.c.小信号;

D O I：

10.16136/j.joel.2004.04.005

中图分类号：

TN312.8 [];

学科分类号：

0803 ;

摘要：

利用交流(a.c.)小信号法对GaN蓝光发光二极管(LEDs)的电容电压特性进行了研究,观察到了GaN蓝光LEDs中的负电容现象,并且测试频率越低、正向电压越大,这种负电容现象就越明显。研究结果表明,这一现象产生的最主要原因是由于GaN蓝光LEDs有源区内注入载流子的辐射复合。

引用

页码：402 / 405

页数：4

共 10 条

[1]

Negative capacitance of GaAs homojunction far-infrared detectors. A G U Perera,W Z Shen,M E Shov. Applied Physics Letters . 1999

[2]

Schottky diodes with high series resistance: limitations of forward I-V methods. V Aubry,F Meyer. Journal of Applied Physics . 1994

[3]

SegregationofSiδdopinginGaAs AlGaAsquantumwellsandthecauseoftheasymmetryinthecurrent voltagecharacteristicsofintersubbandinfrareddetectors. HCLiu,ZRWasilewski,MBuchanan,etal. Applied Physics Letters . 1993

[4]

Unusual capacitance behavior of quantum well infrared photodetectors. M Ershov,H C Liu,L Li,et al. Applied Physics Letters . 1997

[5]

Negative capacitance of silicon diode with deep level traps. T Noguchi,M Kitagawa,I Tuniguchio. Japanese Journal of Applied Physics . 1980

[6]

Negative capacitance at metalsemiconductor interfaces. X Wu,S Yang,H L Evans. Journal of Applied Physiology . 1990

[7]

Negative capacitance effects in semiconductor diodes. B K Jones,J Santana,M Mcpherson. Solid State Communications . 1998

[8]

Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature. N C Chen,P Y Wang,J F Chen. Applied Physics Letters . 1998

[9]

Anomalous inductive effect in selenium schottky diodes. C H Champmess,W R Clark. Applied Physics Letters . 1990

[10]

Negative capacitance effect in semiconductor devices. M Ershov,H C Liu,L Li,et al. IEEE Transactions on Electron Devices . 1998

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