一种新型Si电子束蒸发器的研制及其应用研究

被引:9
作者
王科范
刘金锋
邹崇文
徐彭寿
潘海滨
张西庚
王文君
机构
[1] 中国科学技术大学国家同步辐射实验室
[2] 沈阳聚智科技有限公司
[3] 沈阳聚智科技有限公司 合肥
[4] 合肥
[5] 沈阳
关键词
电子束蒸发器; Si单晶薄膜; Ge量子点; 原子力显微镜(AFM)反射高能电子衍射(RHEED);
D O I
10.13922/j.cnki.cjovst.2005.01.020
中图分类号
O471 [半导体理论];
学科分类号
070205 ; 080501 ; 0809 ; 080903 ;
摘要
我们成功地设计出一种新型的Si电子束蒸发器 ,并将它应用于Ge/Si(111)量子点的生长。由于采用悬臂式设计 ,它完全克服了高压短路的问题。电子束蒸发器的性能试验表明 ,稳定输出功率可以控制输出稳定的Si束流。应用这种电子束蒸发器可以在 70 0℃ ,成功沉积出平整的单晶Si薄膜。进一步的试验表明 ,在这种缓冲层表面可以自组装生长出Ge量子点。
引用
收藏
页码:79 / 82
页数:4
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