基于CMOS集成有源传感器的新型高能物理粒子轨迹追踪器

被引:1
作者
李琰 [1 ,2 ]
Yavuz Deerli [3 ]
纪震 [1 ]
机构
[1] 深圳大学计算机与软件学院德州仪器DSPs实验室
[2] 深圳大市传感器技术重点实验室(深圳大学)
[3] CEA Saclay,IRFU/SEDI, Gif-sur-Yvette Cedex,France
关键词
高能物理粒子轨迹追踪器; CMOS有源像素传感器; 相关双次采样; 随机噪声; 固定噪声;
D O I
暂无
中图分类号
O572.212 []; TP212.9 [传感器的应用];
学科分类号
070202 ; 080202 ;
摘要
本文研究了一个采用标准0.35μm CMOS工艺制造的新型高能物理粒子轨迹追踪器.这个新型的追踪器运用CMOS有源像素传感器技术(CMOS Monolithic Active Pixel Sensors,MAPS)将信号的探测与处理电路集成在一起,在像素的内部实现了相关双次采样操作(Correlated Doubled Sampling,CDS).实验芯片包含一个128行×32列的像素矩阵,其中,像素的大小为25×25μm2.通过采用放射源55Fe的测定,得到像素的等效输入随机噪声(Temporal Noise)仅为12个电子而固定噪声(Fixed Pattern Noise,FPN)仅为4个电子.传感器的电荷-电压转换系数(Charge-to-Voltageconversion Factor,CVF)为60μV/e-.测试中,芯片的信号读取速度达到了12μs/帧.
引用
收藏
页码:1393 / 1399
页数:7
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