共 3 条
[1]
A 13 kV 4H-SiC n-Channel IGBT with Low R<sub>diff;on </sub>and Fast Switching[J] Das Mrinal K.;Zhang Q. Jon;Callanan Robert;Capell Craig;Clayton Jack;Donofrio Matthew;Haney Sarah K.;Husna Fatima;Jonas Charlotte;Richmond Jim;Sumakeris Joseph J. Materials Science Forum 2009,
[2]
Silicon Carbide Emitter Turn-Off Thyristor[J] Jun Wang;Gangyao Wang;Jun Li;Alex Q. Huang;Jerry Melcher;Stan Atcitty;Ty McNutt International Journal of Power Management Electronics 2008,
[3]
A 2.8kV; Forward Drop JBS Diode with Low Leakage[J] Materials Science Forum 2000,

