激光剥离技术实现垂直结构GaN基LED

被引：3

作者：

王婷

崔占忠

徐立新

机构：

[1] 北京理工大学宇航科学技术学院

来源：

光学技术 | 2009年 / 35卷 / 02期

关键词：

光电子学; LED; GaN; 激光剥离; 键合;

D O I：

10.13741/j.cnki.11-1879/o4.2009.02.013

中图分类号：

TN312.8 [];

学科分类号：

0803 ;

摘要：

为改善GaN基发光二极管(Light-emitting diode,LED)的电学特性和提高其输出光功率,采用激光剥离技术,在KrF准分子激光器脉冲激光能量密度为400mJ/cm2的条件下,将GaN基LED从蓝宝石衬底剥离,结合金属熔融键合技术,在300℃中将GaN基LED转移至高电导率和高热导率的硅衬底,制备出了具有垂直结构的GaN基LED,并对其电学和光学特性进行了测试。结果表明:在110mA注入电流下,垂直结构器件的开启电压由普通结构的3.68V降低到了3.27V;在560mA注入电流下,器件输出光功率没有出现饱和现象;采用高电导率和高热导率的硅衬底能有效地改善GaN基LED的电学和光学特性。

引用

收藏

页码：172 / 174

页数：3

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