VEGF/VEGFR在脑缺血再灌注损伤中的神经保护作用

被引:17
作者
何佳
丁凤菲
刘敏珍
王伟
机构
[1] 华中科技大学同济医学院附属同济医院神经内科
关键词
VEGF/VEGFR; 缺血半暗带; 脑内皮细胞;
D O I
暂无
中图分类号
R743 [脑血管疾病];
学科分类号
摘要
目的:研究VEGF/VEGFR在脑缺血再灌注损伤中的神经保护作用。方法:SD大鼠108只,随机分为假手术组、对照组与VEGFR抗体组,每组36只,制备大脑中动脉缺血再灌注损伤(MCAO)模型,假手术组不造成缺血。VEGFR抗体组在造模前20 min侧脑室注射VEGF抗体,假手术组、对照组侧脑室注射等量生理盐水。比较3组在造模后1、3、7 d Bederson评分、VEGFR及缺血半暗带VEGFR2的变化。结果:VEGFR抗体组的Bederson评分在第1、3天高于对照组(P<0.05),VEGFR的表达在第1、3天低于对照组(P<0.01),但较假手术组高;VEGFR抗体组VEGFR2表达在第1、3天低于对照组(P<0.01)。结论:脑缺血再灌注损伤时,VEGF活化刺激VEGFR表达上调,促进血管内皮细胞增殖,加速新生血管形成。
引用
收藏
页码:177 / 180
页数:4
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