VDMOS器件贴片工艺中气泡的形成机制与影响

被引:4
作者
潘少辉
何伦文
汪礼康
张卫
机构
[1] 复旦大学微电子学系专用集成电路国家重点实验室
关键词
横向双扩散金属氧化物; 贴片工艺; 有限元分析法; 热阻;
D O I
10.13290/j.cnki.bdtjs.2007.05.018
中图分类号
TN386 [场效应器件];
学科分类号
摘要
功率MOS管的封装贴片工艺会在贴片层中引入气泡,从而严重降低器件的机械性能、热性能和电学性能。本研究就VDMOS管D-PAK封装模式,给出了贴片工艺中气泡的产生机制及其影响,并利用FEA方法建立了其D-PAK封装的热学模型。根据模拟结果,在贴片层中气泡含量提高时,热阻会急剧增大而降低器件的散热性能。
引用
收藏
页码:436 / 439
页数:4
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