SiC电力电子技术综述

[1] 1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications[J] . Veliadis Victor,McNutt Ty,McCoy Megan,Hearne Harold,De Salvo Gregory,Clarke Chris,Potyraj Paul,Scozzie Charles J..Materials Science Forum . 2009 (600)

[2] Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates[J] . Sumakeris Joseph J.,Henning Jason,O’Loughlin Michael J.,Sriram Saptharishi,Balakrishna Vijay.Materials Science Forum . 2009 (600)

[3] High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications[J] . Cheng Lin,Sankin Igor,Bondarenko Volodymyr,Mazzola Michael S.,Scofield James D.,Sheridan David C.,Martin P.,Casady Janna R. B.,Casady Jeff B..Materials Science Forum . 2009 (600)

[4] SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate[J] . La Via Francesco,Izzo Gaetano,Mauceri Marco,Pistone Giuseppe,Condorelli Giuseppe,Perdicaro L.M.S.,Abbondanza Giuseppe,Portuese F.,Galvagno G.,Di Franco Salvatore,Calcagno Lucia,Foti Gaetano,Valente Gian Luca,Crippa Danilo.Materials Science Forum . 2009 (600)

[5] Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity[J] . Ito Masahiko,Storasta L.,Tsuchida Hidekazu.Materials Science Forum . 2009 (600)

[6] SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch[J] . Rueschenschmidt Kathrin,Treu Michael,Rupp Roland,Friedrichs Peter,Elpelt Rudolf,Peters Dethard,Blaschitz Peter.Materials Science Forum . 2009 (600)

[7] Silicon Carbide Vertical JFET Operating at High Temperature[J] . Vassilevski Konstantin,Hilton Keith P.,Wright Nicolas G.,Uren Michael J.,Munday A.G.,Nikitina Irina P.,Hydes A.J.,Horsfall Alton B.,Johnson C. Mark.Materials Science Forum . 2009 (600)

[8] A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs[J] . Ryu Sei Hyung,Krishnaswami Sumi,Hull Brett A.,Heath Bradley,Husna Fatima,Richmond Jim,Agarwal Anant K.,Palmour John W.,Scofield James D..Materials Science Forum . 2007 (556)

[9] High Temperature Characterization of 4H-SiC Bipolar Junction Transistors[J] . Krishnaswami Sumi,Agarwal Anant K.,Richmond Jim,Capell Craig,Ryu Sei Hyung,Palmour John W.,Geil Bruce,Katsis Dimos,Scozzie Charles J..Materials Science Forum . 2006 (527)

[10] Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC[J] . Lendenmann H.,Bergman J. Peber,Dahlquist Fanny,Hallin Christer.Materials Science Forum . 2003 (433)

[1] 1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications[J] . Veliadis Victor,McNutt Ty,McCoy Megan,Hearne Harold,De Salvo Gregory,Clarke Chris,Potyraj Paul,Scozzie Charles J..Materials Science Forum . 2009 (600)

[2] Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates[J] . Sumakeris Joseph J.,Henning Jason,O’Loughlin Michael J.,Sriram Saptharishi,Balakrishna Vijay.Materials Science Forum . 2009 (600)

[3] High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications[J] . Cheng Lin,Sankin Igor,Bondarenko Volodymyr,Mazzola Michael S.,Scofield James D.,Sheridan David C.,Martin P.,Casady Janna R. B.,Casady Jeff B..Materials Science Forum . 2009 (600)

[4] SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate[J] . La Via Francesco,Izzo Gaetano,Mauceri Marco,Pistone Giuseppe,Condorelli Giuseppe,Perdicaro L.M.S.,Abbondanza Giuseppe,Portuese F.,Galvagno G.,Di Franco Salvatore,Calcagno Lucia,Foti Gaetano,Valente Gian Luca,Crippa Danilo.Materials Science Forum . 2009 (600)

[5] Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity[J] . Ito Masahiko,Storasta L.,Tsuchida Hidekazu.Materials Science Forum . 2009 (600)

[6] SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch[J] . Rueschenschmidt Kathrin,Treu Michael,Rupp Roland,Friedrichs Peter,Elpelt Rudolf,Peters Dethard,Blaschitz Peter.Materials Science Forum . 2009 (600)

[7] Silicon Carbide Vertical JFET Operating at High Temperature[J] . Vassilevski Konstantin,Hilton Keith P.,Wright Nicolas G.,Uren Michael J.,Munday A.G.,Nikitina Irina P.,Hydes A.J.,Horsfall Alton B.,Johnson C. Mark.Materials Science Forum . 2009 (600)

[8] A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs[J] . Ryu Sei Hyung,Krishnaswami Sumi,Hull Brett A.,Heath Bradley,Husna Fatima,Richmond Jim,Agarwal Anant K.,Palmour John W.,Scofield James D..Materials Science Forum . 2007 (556)

[9] High Temperature Characterization of 4H-SiC Bipolar Junction Transistors[J] . Krishnaswami Sumi,Agarwal Anant K.,Richmond Jim,Capell Craig,Ryu Sei Hyung,Palmour John W.,Geil Bruce,Katsis Dimos,Scozzie Charles J..Materials Science Forum . 2006 (527)

[10] Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC[J] . Lendenmann H.,Bergman J. Peber,Dahlquist Fanny,Hallin Christer.Materials Science Forum . 2003 (433)