正加速度致脑损伤和学习记忆障碍的多重机制假说

被引：4

作者：

孙喜庆

吴兴裕

李金声

曹新生

机构：

[1] 第四军医大学航空航天生物动力学教研室,第四军医大学航空航天生物动力学教研室,第四军医大学航空航天生物动力学教研室,第四军医大学航空航天生物动力学教研室陕西西安,陕西西安,陕西西安,陕西西安

来源：

航天医学与医学工程 | 2004年 / 04期

关键词：

正加速度; 脑损伤; 学习; 记忆; +Gz; 离心机;

D O I：

10.16289/j.cnki.1002-0837.2004.04.015

中图分类号：

R85 [航空航天医学];

学科分类号：

1001 ; 100106 ;

摘要：

作者利用动物离心机较系统地研究了高G暴露对脑的影响及其机制,联系国内外加速度生理研究最新进展,提出了高G致脑损伤和学习记忆障碍的多重机制假说,认为高G暴露引起的脑缺血是导致脑损伤和学习记忆障碍的主要原因,其生物化学及分子生物学机制涉及脑能量代谢降低、脑离子平衡紊乱、血脑屏障通透性增加、脑一氧化氮合酶和c-fos表达增加及热休克蛋白(HSP70)的保护作用等;颅内压力剧烈变化和应力增加是高G致脑损伤的重要因素之一;血液流变学特性改变在高G致脑损伤中起一定作用。

引用

页码：297 / 302

页数：6

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