Silicon carbide resonant tuning fork for microsensing applications in high-temperature and high G-shock environments

被引：5

作者：

David R Myers ^{[1
]}

Kan Bun Cheng ^{[1
]}

Babak Jamshidi ^{[1
]}

Robert G Azevedo ^{[1
]}

Debbie G Senesky ^{[1
]}

Mehran Mehregany ^{[2
]}

Muthu B J Wijesundara ^{[1
]}

Albert P Pisano ^{[1
]}

机构：

[1] Department of Mechanical Engineering,Berkeley Sensor and Actuator Center,University of California,Berkeley,California 94720,USA

[2] Department of Electrical Engineering and Computer Science Cleveland,Case Western Reserve University,Cleveland,Ohio 44106,USA

来源：

EngineeringSciences | 2012年 / 10卷 / 05期

关键词：

MEMS; SiC; thermal effects; double ended tuning fork(DETF); harsh environment; high temperature; high shock; inertial; strain; sensors;

D O I：

暂无

中图分类号：

TP212 [发送器（变换器）、传感器];

学科分类号：

080202 ;

摘要：

We present the fabrication and testing of a silicon carbide(SiC)balanced mass double-ended tuning fork that survives harsh environments without compromising the device strain sensitivity and resolution bandwidth.The device features a material stack that survives corrosive environments and enables high-temperature operation.To perform high-temperature testing,a specialized setup was constructed that allows the tuning fork to be characterized using traditional silicon electronics.The tuning fork has been operated at 600 ℃ in the presence of dry steam for short durations.This tuning fork has also been tested to 64 000 G using a hard-launch,soft-catch shock implemented with a light gas gun.However,the device still has a strain sensitivity of 66 Hz/με and strain resolution of 0.045 με in a 10 kHz bandwidth.As such,this balanced-mass double-ended tuning fork can be used to create a variety of different sensors including strain gauges,accelerometers,gyroscopes,and pressure transducers.Given the adaptable fabrication process flow,this device could be useful to micro-electro-mechanical systems(MEMS) designers creating sensors for a variety of different applications.

引用

页码：36 / 41

页数：6

共 2 条

[1]

SiC electronics market to reach MYM 800 m by 2015 .2 Semi- conductor Today . 2007

[2]

Surface-micromachined resonant accelerometer .2 Trey A Roessig,Roger T Howe,Albert P Pisano,et al. 1997 International Conference on Transducers, Solid State Sensors and Actuators . 1997

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