脉冲激光沉积(PLD)法生长高质量ZnO薄膜及其发光性能

被引:6
作者
边继明 [1 ]
杜国同 [1 ]
胡礼中 [1 ]
李效民 [2 ]
赵俊亮 [2 ]
机构
[1] 大连理工大学物理系三束材料改性国家重点实验室
[2] 中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室
关键词
ZnO薄膜; 脉冲激光沉积; 光致发光;
D O I
暂无
中图分类号
O484.41 [];
学科分类号
0803 ;
摘要
采用脉冲激光沉积(PLD)法在单晶Si(100)衬底上生长ZnO薄膜,以X射线衍射(XRD)、原子力显微镜(AFM)和透射电镜(TEM)等手段分析了所得ZnO薄膜的晶体结构和微观形貌。优化工艺(700℃,20Pa)下生长的ZnO薄膜呈c轴高度择优取向,柱状晶垂直衬底表面生长,结构致密均匀。室温光致发光(PL)谱分析结果表明,随着薄膜生长时O2分压的增大,近带边紫外发光峰与深能级发光峰之比显著增强,表明薄膜的结晶性能和化学计量比都有了很大的改善。O2分压为20Pa时所生长的ZnO薄膜具有较理想的化学计量比和较高的光学质量。
引用
收藏
页码:958 / 962
页数:5
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