双主动全桥变换器的高频振荡影响因素

被引:6
作者
崔彬
李欣阳
薛芃
蒋晓华
机构
[1] 清华大学电机工程与应用电子技术系电力系统及大型发电设备控制和仿真国家重点实验室
关键词
双主动全桥变换器; 高频振荡; 分布电容; 高速开关器件;
D O I
10.16511/j.cnki.qhdxxb.2019.22.037
中图分类号
TM46 [变流器];
学科分类号
080801 ;
摘要
随着新一代宽禁带半导体器件在双主动全桥(DAB)变换器中的应用,变换器交流侧出现较高的电压上升率(dv/dt)。高dv/dt含有丰富的高频谐波成分,引起变压器分布电容与系统感性元件之间产生严重的高频振荡问题。该文基于高频变压器π型三电容分布参数模型,推导了变压器端口电压高频振荡的时域解析方程,定量分析了dv/dt和变压器分布电容对高频振荡幅值的影响,并通过调节系统dv/dt实现了对高频振荡幅值的抑制。搭建了DAB变换器实验样机系统和对应的LTspice电路仿真模型,验证了高频振荡问题理论分析的合理性和正确性。
引用
收藏
页码:530 / 536
页数:7
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