Analytical electrostatic model of silicon conical field emitters - Part II: Extension to devices with focusing electrode

被引：12

作者：

Dvorson, L ^{[1
]}

Ding, M ^{[1
]}

Akinwande, AI ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 01期

关键词：

electron beam focusing; electron beam semiconductor devices; electron emission; electrostatic analysis; electrostatic focusing; flat panel displays; vacuum microelectronics;

D O I：

10.1109/16.892181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We extended the "bowling pin model" (BPM) presented in Part I. to the case of double-gated conical field emitters. The model was used for trajectory calculations for both the single-gated and double-gated devices. Analysis also produced the governing relationship for the optimal operating voltages on the gate and focus electrodes of a double-gated emitter.

引用

页码：144 / 148

页数：5

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