Effects of Zr doping on the microstructures and dielectric properties of CaCu3Ti4O12 ceramics

被引：54

作者：

Chi, Q. G. ^{[1
,2
,3
]}

Gao, L. ^{[1
]}

Wang, X. ^{[1
]}

Lin, J. Q. ^{[2
]}

Sun, J. ^{[2
]}

Lei, Q. Q. ^{[1
]}

机构：

[1] Harbin Univ Sci & Technol, Coll Elect & Elect Engn, Minist Educ, Key Lab Engn Dielect & Its Applicat, Harbin 150080, Peoples R China

[2] Harbin Univ Sci & Technol, Sch Appl Sci, Harbin 150080, Peoples R China

[3] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 559卷

基金：

中国博士后科学基金;

关键词：

Ceramics; Sol-gel method; Microstructure; Dielectric response; BARRIER LAYER; CONSTANT; SUBSTITUTION; SRTIO3;

D O I：

10.1016/j.jallcom.2013.01.090

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zr-doped CaCu3Ti3.95Zr0.05O12 (CCTZO) ceramics were prepared by sol-gel method, and pure-phased structures were observed by the X-ray diffraction. The microstructures and dielectric properties of CaCu3Ti4O12 (CCTO) and CCTZO ceramics were investigated. The CCTZO ceramics possessed a fine-grained microstructure with grain sizes of about 3-5 mu m, and the grain size uniformity of CCTZO ceramics were enhanced via doping Zr in CCTO ceramics. Meanwhile, CCTZO ceramics exhibited a broadband stability of the dielectric constant and a lower dielectric loss at high frequency ranges. The dielectric relaxation mechanisms of CCTO and CCTZO ceramics were analyzed using the mixed-valent structures. The impedance analysis suggested CCTO and CCTZO ceramics consisted of semiconducting grains and insulating grain boundaries. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：45 / 48

页数：4

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