Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfection

被引：44

作者：

Triboulet, R ^{[1
]}

Ndap, JO ^{[1
]}

TromsonCarli, A ^{[1
]}

Lemasson, P ^{[1
]}

Morhain, C ^{[1
]}

Neu, G ^{[1
]}

机构：

[1] CNRS,CTR RECH HETEROEPITAXIE & APPLICAT,F-06560 VALBONNE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00721-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Some physical properties of ZnSe resulting from the ionicity of its chemical bond make it difficult its melt-growth, suggesting the use of low temperature growth. Among the classical techniques of low temperature growth, solution and vapor growth are shown to present some limitations. Solid state recrystallization is presented as an attractive alternative for the growth of large ZnSe crystals of high purity and structural perfection, as shown from photoluminescence and X-ray diffraction measurements.

引用

页码：156 / 160

页数：5

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