Effect of Mg concentration on the domain reversal of Mg-doped LiNbO3 -: art. no. 212904

被引：30

作者：

Chen, YL ^{[1
]}

Yan, WG

Guo, J

Chen, SL

Zhang, GY

Xia, ZG

机构：

[1] Nankai Univ, Inst Phys Sci, Tianjin 300071, Peoples R China

[2] CETC Deqing Huaying Elect Co, Zhejiang 313216, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2135389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgO-doped LiNbO3 (MgLN) crystal has been produced using the Czochralski method. The domain reversal characteristics of the MgO-doped LiNbO3 single crystals with different Mg doping levels have been investigated, and the switching field is found to decrease with the increasing of Mg concentration. The switching field for the domain reversal in the MgLN crystal doped with 6.5 mol % MgO was similar to 4.6 kV/mm. This is about one-fifth of the switching field for the congruent crystal. The resistance of the poling MgLN crystals as a function of Mg concentration was measured, and the influence of doping Mg on domain reversion for Mg-doped LiNbO3 is discussed, and explain the physical mechanism of the polarization switching of the MgLN crystals. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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