Synthesis and properties of n-type doped semiconducting materials

被引：6

作者：

Chmil, KH ^{[1
]}

deLeeuw, DM ^{[1
]}

Simenon, MMJ ^{[1
]}

Tol, AJW ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,ORGAN CHEM LAB,NL-5600 MB EINDHOVEN,NETHERLANDS

来源：

SYNTHETIC METALS | 1997年 / 84卷 / 1-3期

关键词：

heterocycle synthesis; local density approximations; electrochemical methods;

D O I：

10.1016/S0379-6779(97)80795-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The availibility of stable n-type doped semiconducting polymers would allow the fabrication of p(i)n-diodes and light-emitting p(i)n-diodes. But until now no n-type doped conducting polymers, having similar stability to p-doped polymers, such as polypyrrole or polyaniline, are known. For applications in bipolar polymeric microelectronic devices we aim for n-type doped polymers with an electrode potential of about -0.5 V (SCE). Electronegative hetero aromatic oligomers, viz. oligo-oxa(thia)diazoles, are presently synthesized for this purpose to demonstrate the correlation between conjugation length and observed redox potential.

引用

页码：387 / 388

页数：2

共 6 条

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