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The toughest transistor yet
被引：189
作者：
Eastman, LF
[1
]
Mishra, UK
机构：
[1] Cornell Univ, Ithaca, NY 14853 USA
[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
关键词：
D O I：
10.1109/6.999791
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
From broadband wireless to compact radars, countless future scenarios depend on the high power and high frequencies that only gallium nitride can deliver. As such, GaN transistors could double or triple the efficiency of base-station amplifiers, so that a given area could be covered by fewer base stations or beflooded with more data at much higher rates.
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页码：28 / +
页数：7
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