Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

被引：123

作者：

Sridhara, SG ^{[1
]}

Eperjesi, TJ ^{[1
]}

Devaty, RP ^{[1
]}

Choyke, WJ ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

absorption coefficient; ultraviolet; silicon carbide; pumping lasers; wavelength;

D O I：

10.1016/S0921-5107(98)00508-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the values of the absorption coefficient of 4H, 6H and 3C SiC at room temperature, in the range 3900-2968 Angstrom. By using the known shift in the bandgap with temperature, we also present estimates of the absorption coefficient of 4H, 6H and 3C SIC at 2 K. A table is given for penetration depths at 300 and 2 K for seven common lasers used to pump SIC in this region. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：229 / 233

页数：5

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