High optical intensity 2-D AlGaAs laser arrays

High power diode laser arrays have been demonstrated using relatively simple manufactured water-cooled packages. The layer structure of the graded-index separate confinement heterostructure (GRIN-SCH) using AlGaAs material systems were employed for the 0.8 mu m-emission. The laser bars have broad-area stripes (70 mu m) with a pitch of 150 mu m and a cavity length of 500 mu m. A maximum power of 40 W per 1-cm-laser-bar was obtained for the layer structure with 10-nm-thick quantum well. We stack 15 laser bar modules (laser block) and fabricated two-dimensional laser arrays with 45 laser bars, consisting of 3 laser blocks. The total output power is about 680 W, which corresponds to an intensity of about 110 W/cm(2). The reliability data of 200W laser blocks are shown to be about 5000 hours extrapolated by 2000 hours' data.